Defect engineering: reduction effect of hydrogen atom impurities in HfO 2 -based resistive-switching=0Amemory devices

Seonghyun Kim, Daeseok Lee, Jubong Park, Seungjae Jung, Wootae Lee, Jungho Shin, Jiyong Woo, Godeuni Choi and Hyunsang Hwang Link to full article

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