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B. Dlubak, M.-B. Martin, and C. Deranlot et al.
We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O2 atmosphere. The Al2O3 layer presents no pinholes and is homogeneous enough to a ... [Appl. Phys. Lett. 101, 203104 (2012)] published Mon Nov 12, 2012.
Link to full article
B. Dlubak, M.-B. Martin, and C. Deranlot et al.
We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O2 atmosphere. The Al2O3 layer presents no pinholes and is homogeneous enough to a ... [Appl. Phys. Lett. 101, 203104 (2012)] published Mon Nov 12, 2012.
Link to full article
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