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A. M. Hartel, S. Gutsch, and D. Hiller et al.
We report on an in-situ oxidation effect during annealing of SiO2/SiO1.0N0.23 multilayers prepared by plasma enhanced chemical vapour deposition (PECVD). This in-situ oxidation leads to an undesired growth of the tunneling oxide and also affects the silicon nanocrystal (SiNC) size control, i.e., a ... [Appl. Phys. Lett. 101, 193103 (2012)] published Wed Nov 07, 2012.
Link to full article
A. M. Hartel, S. Gutsch, and D. Hiller et al.
We report on an in-situ oxidation effect during annealing of SiO2/SiO1.0N0.23 multilayers prepared by plasma enhanced chemical vapour deposition (PECVD). This in-situ oxidation leads to an undesired growth of the tunneling oxide and also affects the silicon nanocrystal (SiNC) size control, i.e., a ... [Appl. Phys. Lett. 101, 193103 (2012)] published Wed Nov 07, 2012.
Link to full article
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