Miao Zhong, Yukio Sato, Mario Kurniawan, Aleksandra Apostoluk, Bruno Masenelli, Etsuo Maeda, Yuichi Ikuhara and Jean-Jacques Delaunay
A single crystal domain texture quality (a unique in-plane and out-of-plane crystalline orientation over a large area) ZnO nanostructure of a dense nanowire array on a thick film has been homogeneously synthesized on a -plane sapphire substrates over large areas through a one-step chemical vapor deposition (CVD) process. The growth mechanism is clarified: a single crystal [ ##IMG## [http://ej.iop.org/images/0957-4484/23/49/495602/nano443963ieqn17.gif] {$0\bar {2}1$} ] oriented ZnAl 2 O 4 buffer layer was formed at the ZnO film and the a -plane sapphire substrate interface via a diffusion reaction process during the CVD process, providing improved epitaxial conditions that enable the synthesis of the high crystalline quality ZnO nanowire array on a film structure. The high optoelectronic quality of the ZnO nanowire array on a film sample is evidenced by the free exitonic emissions in the low-temperature photoluminescence spectrosc...
Link to full article
A single crystal domain texture quality (a unique in-plane and out-of-plane crystalline orientation over a large area) ZnO nanostructure of a dense nanowire array on a thick film has been homogeneously synthesized on a -plane sapphire substrates over large areas through a one-step chemical vapor deposition (CVD) process. The growth mechanism is clarified: a single crystal [ ##IMG## [http://ej.iop.org/images/0957-4484/23/49/495602/nano443963ieqn17.gif] {$0\bar {2}1$} ] oriented ZnAl 2 O 4 buffer layer was formed at the ZnO film and the a -plane sapphire substrate interface via a diffusion reaction process during the CVD process, providing improved epitaxial conditions that enable the synthesis of the high crystalline quality ZnO nanowire array on a film structure. The high optoelectronic quality of the ZnO nanowire array on a film sample is evidenced by the free exitonic emissions in the low-temperature photoluminescence spectrosc...
Link to full article
No comments:
Post a Comment