Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing

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J. G. Keizer, A. B. Henriques, and A. D. B. Maia et al.

The optoelectronic properties of InAs/GaAs quantum dots can be tuned by rapid thermal annealing. In this study, the morphology change of InAs/GaAs quantum dots layers induced by rapid thermal annealing was investigated at the atomic-scale by cross-sectional scanning tunneling microscopy. Finite el ... [Appl. Phys. Lett. 101, 243113 (2012)] published Wed Dec 12, 2012.



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