Vincenzo Grillo
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Nanoscale , 2012, Accepted Manuscript
DOI: 10.1039/C2NR32907G, Paper
DOI: 10.1039/C2NR32907G, Paper
Enzo Rotunno, Laura Lazzarini, Massimo Longo, Vincenzo Grillo
Further improvement of phase change memory devices based on Ge-Sb-Te alloys imposes the reduction of the active cell dimensions to the nanoscale. We investigate the effect of nanostructuring on the...
The content of this RSS Feed (c) The Royal Society of Chemistry
Further improvement of phase change memory devices based on Ge-Sb-Te alloys imposes the reduction of the active cell dimensions to the nanoscale. We investigate the effect of nanostructuring on the...
The content of this RSS Feed (c) The Royal Society of Chemistry
Link to full article
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