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Monday, December 17, 2012

Strain relaxation in GaN nanopillars

(author unknown)



W. J. Tseng, M. Gonzalez, and L. Dillemans et al.

In this work, we demonstrate the direct measurement of the strain state at the surface of nanostructures by in-plane X-ray diffraction. GaN tapered nanopillars have been fabricated by dry etching of a highly strained epilayer. The strain of the surface as function of pillar height shows an exponen ... [Appl. Phys. Lett. 101, 253102 (2012)] published Mon Dec 17, 2012.



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