Three-Dimensional Etching of Silicon for the Fabrication of Low-Dimensional and Suspended Devices

Axel Scherer

Nanoscale , 2012, Accepted Manuscript

DOI: 10.1039/C2NR32981F, Communication

Sameer S Walavalkar, Andrew P. Homyk, M. David Henry, Axel Scherer

In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon with sub-10 nm precision. This top-down, CMOS compatible...

The content of this RSS Feed (c) The Royal Society of Chemistry

Link to full article