(author unknown)
A. Lin, J. N. Shapiro, and A. C. Scofield et al.
We investigate the effects of in-situ passivation on the electrical transport of InAs nanopillars (NPs) grown on InAs (111)B substrates via selective-area epitaxy. Before passivation, the transport properties of InAs NPs, studied by single-NP field-effect transistors, are highly dependent on NP di ... [Appl. Phys. Lett. 102, 053115 (2013)] published Wed Feb 06, 2013.
Link to full article
A. Lin, J. N. Shapiro, and A. C. Scofield et al.
We investigate the effects of in-situ passivation on the electrical transport of InAs nanopillars (NPs) grown on InAs (111)B substrates via selective-area epitaxy. Before passivation, the transport properties of InAs NPs, studied by single-NP field-effect transistors, are highly dependent on NP di ... [Appl. Phys. Lett. 102, 053115 (2013)] published Wed Feb 06, 2013.
Link to full article
No comments:
Post a Comment