Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

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R. Kotlyar, U. E. Avci, and S. Cea et al.

Direct bandgap transition engineering using stress, alloying, and quantum confinement is proposed to achieve high performing complementary n and p tunneling field effect transistors (TFETs) based on group IV materials. The critical tensile stress for this transition decreases in Ge1−xSnx for Sn co ... [Appl. Phys. Lett. 102, 113106 (2013)] published Thu Mar 21, 2013.



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