Friday, May 03, 2013

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

(author unknown)



N. Cherkashin, S. Reboh, and M. J. Hÿtch et al.

Non-truncated pyramidal In(Ga)As quantum dots (QDs) embedded in GaAs were obtained by a combination of low temperature/high rate GaAs covering of InAs QDs. We use advanced transmission electron microscopy to study the composition and mechanics of the objects. Results from the core region of a slic ... [Appl. Phys. Lett. 102, 173115 (2013)] published Fri May 03, 2013.



Link to full article

No comments:

Post a Comment