Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

S. A. Mala, L. Tsybeskov, and D. J. Lockwood et al.

An intense photoluminescence (PL) peaking near 0.9 eV is emitted by a single Si1−xGex nanometer-thick layer (NL) with x ≈ 8% incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs). The SiGe NL PL does not saturate in output intensity with up to 50 mJ/cm2 of excitation energy density, and it has ... [Appl. Phys. Lett. 103, 033103 (2013)] published Mon Jul 15, 2013.



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