Gradual electroforming and memristive switching in Pt/CuO x /Si/Pt systems

We report a memristive switching effect in Pt/CuO x /Si/Pt devices prepared by the rf sputtering technique at room temperature. Differently from other Cu-based metal filament switching systems, a gradual electroforming process, marked by a gradual increase of the device resistance and a gradual decrease of the device capacitance, was observed in the current–voltage and capacitance characteristics. After the gradual electroforming, the devices show a uniform memristive switching behavior. By Auger electron spectroscopy analysis, a model based on the thickness change of the SiO x layer at the CuO x /Si interface and Cu ion migration is proposed for the gradual electroforming and uniform memristive switching, respectively. This work should be meaningful for the preparation of forming-free and homogeneous memristive devices.

L L Wei, D S Shang, J R Sun, S B Lee, Z G Sun and B G Shen

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