[Zr(NEtMe)2(guan-NEtMe)2] as a Novel Atomic Layer Deposition Precursor: ZrO2 Film Growth and Mechanistic Studies

Chemistry of Materials

DOI: 10.1021/cm401279v

Timothee Blanquart, Jaakko Niinistö, Nabeel Aslam, Manish Banerjee, Yoann Tomczak, Marco Gavagnin, Valentino Longo, Esa Puukilainen, H. D. Wanzenboeck, W. M. M. Kessels, Anjana Devi, Susanne Hoffmann-Eifert, Mikko Ritala and Markku Leskelä

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