Hysteretic response of chemical vapor deposition graphene field effect transistors on SiC substrates

Edward Cazalas, Isaac Childres, and Amanda Majcher et al.

Graphene field effect transistors (GFETs) fabricated by chemical vapor deposition graphene deposited onto SiC substrates exhibit sensitivity to broadband visible light. The hysteretic nature of this GFET type was studied utilizing a new current-voltage measurement technique in conjunction with cur ... [Appl. Phys. Lett. 103, 053123 (2013)] published Fri Aug 02, 2013.



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