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Friday, September 20, 2013

Growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE




Nanoscale , 2013, Advance Article

DOI: 10.1039/C3NR03032F, Paper

Sahng-Kyoon Jerng, Kisu Joo, Youngwook Kim, Sang-Moon Yoon, Jae Hong Lee, Miyoung Kim, Jun Sung Kim, Euijoon Yoon, Seung-Hyun Chun, Yong Seung Kim

Topological insulator Bi2 Se3 thin films are grown directly on an oxidized amorphous silicon (SiO2 ) substrate by molecular beam epitaxy using a van der Waals epitaxy method.

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