Monday, January 13, 2014

Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon

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Chemistry of Materials

DOI: 10.1021/cm4037023




O. V. Bilousov, J. J. Carvajal, A. Vilalta-Clemente, P. Ruterana, F. Díaz, M. Aguiló and C. O’Dwyer

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