Pressure-Induced Changes on The Electronic Structure and Electron Topology in the Direct FCC → SH Transformation of Silicon

The Journal of Physical Chemistry C

DOI: 10.1021/jp408666q

John S. Tse, Michael Hanfland, Roxana Flacau, Serge Desgreniers, Zucheng Li, Kolja Mende, Keith Gilmore, Alexander Nyrow, Marco Moretti Sala and Christian Sternemann

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