Systematic Control of Hole-Injection Barrier Height with Electron Acceptors in [7]phenacene Single-Crystal Field-Effect Transistors

The Journal of Physical Chemistry C

DOI: 10.1021/jp4107469

Xuexia He, Shino Hamao, Ritsuko Eguchi, Hidenori Goto, Yukihiro Yoshida, Gunzi Saito and Yoshihiro Kubozono

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