White light emission from heterojunction diodes based on surface-oxidized porous Si nanowire arrays and amorphous In-Ga-Zn-O capping

Nanoscale , 2014, Advance Article

DOI: 10.1039/C3NR05328H, Paper

Kyeong-Ju Moon, Tae Il Lee, Woong Lee, Jae-Min Myoung

A novel heterojunction white light emitting diode (LED) structure based on an array of vertically aligned surface-passivated p-type porous Si nanowires (PSiNWs) with n-type amorphous In-Ga-Zn-O (a-IGZO) capping is introduced.

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