High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

Nanoscale , 2014, 6,5479-5483

DOI: 10.1039/C3NR06690H, Paper

Ngoc Huynh Van, Jae-Hyun Lee, Jung Inn Sohn, Seung Nam Cha, Dongmok Whang, Jong Min Kim, Dae Joon Kang

High performance NWCMOS inverter devices by employing n- and p-type Si NWFETs with tunable threshold voltage for digital logic applications.

The content of this RSS Feed (c) The Royal Society of Chemistry

Click for full article