High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Nano Letters

DOI: 10.1021/nl501275p

Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire, Meeghage Madusanka Perera, Bhim Chamlagain, Mark Ming-Cheng Cheng, Jiaqiang Yan, David Mandrus, David Tománek and Zhixian Zhou

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