Friday, June 06, 2014

Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization

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ACS Nano

DOI: 10.1021/nn502438k




Mykola Telychko, Pingo Mutombo, Martin Ondráček, Prokop Hapala, François C. Bocquet, Jindřich Kolorenč, Martin Vondráček, Pavel Jelínek and Martin Švec

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