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Wednesday, June 25, 2014

Molecular Doping Control at a Topological Insulator Surface: F4-TCNQ on Bi2Se3

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The Journal of Physical Chemistry C

DOI: 10.1021/jp412690h




J. Wang, A. S. Hewitt, R. Kumar, J. Boltersdorf, T. Guan, F. Hunte, P. A. Maggard, J. E. Brom, J. M. Redwing and D. B. Dougherty

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