Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR00028E, Paper
DOI: 10.1039/C4NR00028E, Paper
Zeyuan Ni, Hongxia Zhong, Xinhe Jiang, Ruge Quhe, Guangfu Luo, Yangyang Wang, Meng Ye, Jinbo Yang, Junjie Shi, Jing Lu
We predict that a sizable band gap can be opened at the Dirac point of silicene without degrading silicene's electronic properties with n-type doping by Cu, Ag, and Au adsorption, p-type doping by Ir adsorption, and neutral doping by Pt adsorption. The silicene tunneling transistors are simulated.
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We predict that a sizable band gap can be opened at the Dirac point of silicene without degrading silicene's electronic properties with n-type doping by Cu, Ag, and Au adsorption, p-type doping by Ir adsorption, and neutral doping by Pt adsorption. The silicene tunneling transistors are simulated.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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