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Friday, October 10, 2014

Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms

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ACS Nano

DOI: 10.1021/nn5038509




Chris M. Corbet, Connor McClellan, Kyounghwan Kim, Sushant Sonde, Emanuel Tutuc and Sanjay K. Banerjee

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