Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR04394D, Paper
DOI: 10.1039/C4NR04394D, Paper
Yuxiang Luo, Diyang Zhao, Yonggang Zhao, Fu-kuo Chiang, Pengcheng Chen, Minghua Guo, Nannan Luo, Xingli Jiang, Peixian Miao, Ying Sun, Aitian Chen, Zhu Lin, Jianqi Li, Wenhui Duan, Jianwang Cai, Yayu Wang
Resistive switching effect is promising for the next generation information storage.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Resistive switching effect is promising for the next generation information storage.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Click for full article
No comments:
Post a Comment