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Wednesday, September 16, 2015

Strain-tuned optoelectronic property of hollow gallium sulphide microsphere

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR05528H, Paper
Yin Zhang, Chen Chen, chongyun liang, Zhengwang Liu, Yuesheng Li, Renchao Che
Sulfide semiconductors have been attracting extensive attentions. The main challenge requests a solution to prepare the materials with designable morphology, controllable band structure and optoelectronic properties. Herein, we report a...
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