Frustrated Etching during H/Si(111) Methoxylation Produces Fissured Fluorinated Surfaces, Whereas Direct Fluorination Preserves the Atomically Flat Morphology

The Journal of Physical Chemistry C

DOI: 10.1021/acs.jpcc.5b08889

Erik S. Skibinski, William J. I. DeBenedetti, Sara M. Rupich, Yves J. Chabal and Melissa A. Hines
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