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Wednesday, November 04, 2015

Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrode

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR06076A, Paper
Deshun Qu, Xiaochi Liu, Faisal Ahmed, Daeyeong Lee, Won Jong Yoo
Investigating the carrier transport mechanism in a multi-layer MoS2 and high performance MoS2 FET enabled by a bottom graphene contact.
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