Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR07377D, Paper
DOI: 10.1039/C5NR07377D, Paper
Seung Hyun, Owoong Kwon, Bom-yi Lee, Daehee Seol, Beomjin Park, Jae Yong Lee, Ju Hyun Lee, Yunseok Kim, Jin Kon Kim
Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to fastly accommodate an extremely large number of data bits because it is capable of storing...
The content of this RSS Feed (c) The Royal Society of Chemistry
Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to fastly accommodate an extremely large number of data bits because it is capable of storing...
The content of this RSS Feed (c) The Royal Society of Chemistry
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