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Tuesday, January 10, 2017
Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3
The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.6b11085
from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) http://ift.tt/2jzGpsy
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