Thursday, October 18, 2012

Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

(author unknown)



K. Fujita, K. Banno, and H. R. Aryal et al.

Carbon layer has been grown on a Ni/SiO2/Si(111) substrate under high vacuum pressure by pulse arc plasma deposition. From the results of Raman spectroscopy for the sample, it is found that graphene was formed by ex-situ annealing of sample grown at room temperature. Furthermore, for the sample gr ... [Appl. Phys. Lett. 101, 163109 (2012)] published Thu Oct 18, 2012.



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