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Min-Kyu Joo, Junghwan Huh, and Mireille Mouis et al.
Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical para ... [Appl. Phys. Lett. 102, 053114 (2013)] published Wed Feb 06, 2013.
Link to full article
Min-Kyu Joo, Junghwan Huh, and Mireille Mouis et al.
Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical para ... [Appl. Phys. Lett. 102, 053114 (2013)] published Wed Feb 06, 2013.
Link to full article
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