Tuesday, February 05, 2013

Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices

(author unknown)



Jiri Thoma, Baolai Liang, and Liam Lewis et al.

We characterize the electro-optical and lasing properties of a hybrid material consisting of multiple InAs quantum dot (QD) layers together with an InGaAs quantum well (QW) grown on a GaAs substrate. Over 40 nm Stark shift of the InGaAs QW leading to 9 dB extinction ratio was demonstrated. Lasing ... [Appl. Phys. Lett. 102, 053110 (2013)] published Tue Feb 05, 2013.



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