F Haas, K Sladek, A Winden, M von der Ahe, T E Weirich, T Rieger, H Lüth, D Grützmacher, Th Schäpers and H Hardtdegen
We report on the technology and growth optimization of GaAs/InAs core/shell nanowires. The GaAs nanowire cores were grown selectively by metal organic vapor phase epitaxy (SA-MOVPE) on SiO 2 masked GaAs ##IMG## [http://ej.iop.org/images/0957-4484/24/8/085603/nano449953ieqn7.gif] {$(\bar {1}\bar {1}\bar {1})\mathrm{B}$} templates. These were structured by a complete thermal nanoimprint lithography process, which is presented in detail. The influence of the subsequent InAs shell growth temperature on the shell morphology and crystal structure was investigated by scanning and transmission electron microscopy in order to obtain the desired homogeneous and uniform InAs overgrowth. At the optimal growth temperature, the InAs shell adopted the morphology and crystal structure of the underlying GaAs core and was perfectly uniform.
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We report on the technology and growth optimization of GaAs/InAs core/shell nanowires. The GaAs nanowire cores were grown selectively by metal organic vapor phase epitaxy (SA-MOVPE) on SiO 2 masked GaAs ##IMG## [http://ej.iop.org/images/0957-4484/24/8/085603/nano449953ieqn7.gif] {$(\bar {1}\bar {1}\bar {1})\mathrm{B}$} templates. These were structured by a complete thermal nanoimprint lithography process, which is presented in detail. The influence of the subsequent InAs shell growth temperature on the shell morphology and crystal structure was investigated by scanning and transmission electron microscopy in order to obtain the desired homogeneous and uniform InAs overgrowth. At the optimal growth temperature, the InAs shell adopted the morphology and crystal structure of the underlying GaAs core and was perfectly uniform.
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