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Yang Lu and Jing Guo
We developed a quantum transport model to simulate transport properties of topological insulator (TI)-based spintronic memory devices. The model captures the effects of spin-momentum locking, Klein tunneling, and coupled spin dynamics. Based on the model, we present a design of spin-transfer torqu ... [Appl. Phys. Lett. 102, 073106 (2013)] published Wed Feb 20, 2013.
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Yang Lu and Jing Guo
We developed a quantum transport model to simulate transport properties of topological insulator (TI)-based spintronic memory devices. The model captures the effects of spin-momentum locking, Klein tunneling, and coupled spin dynamics. Based on the model, we present a design of spin-transfer torqu ... [Appl. Phys. Lett. 102, 073106 (2013)] published Wed Feb 20, 2013.
Link to full article
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