Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k PZT gate dielectric

Nanoscale , 2015, Accepted Manuscript

DOI: 10.1039/C5NR01072A, Communication

Changjian Zhou, Xinsheng Wang, Salahuddin Raju, Ziyuan Lin, Daniel Villaroman, Baoling Huang, WLH Chan, Mansun Chan, Yang Chai

MoS2 and other atomic-level thick layered materials have been shown with high potential for outperforming Si transistor at the scaling limit. In this work, we demonstrate a MoS2 transistor with...

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