Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR05036G, Paper

Guanhong Li, Qunqing Li, Yuanhao Jin, Yudan Zhao, Xiaoyang Xiao, Kaili Jiang, Jiaping Wang, Shoushan Fan
A bilayer dielectric structure of MgO and ALD Al₂O₃ or HfO₂ was used for making n-type SWCNT-TFTs at a low temperature of 120 [degree]C.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry

Click for full article