Tuesday, October 06, 2015

Strain-tuned optoelectronic properties of hollow gallium sulphide microspheres

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR05528H, Paper
Yin Zhang, Chen Chen, C. Y. Liang, Z. W. Liu, Y. S. Li, Renchao Che
The strain distribution of gallium sulphide microspheres were studied by TEM-GPA method.
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