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P. Dimitrakis, P. Normand, and C. Bonafos et al.
Gallium nitride quantum dots (QDs) were investigated as discrete charge storage nodes embedded in the gate dielectric of metal-oxide-semiconductor (MOS) capacitors. The GaN QDs were formed on top of 3.5 nm-thick SiO2/n-Si(001) substrates by radiofrequency plasma-assisted molecular beam deposition. ... [Appl. Phys. Lett. 102, 053117 (2013)] published Wed Feb 06, 2013.
Link to full article
P. Dimitrakis, P. Normand, and C. Bonafos et al.
Gallium nitride quantum dots (QDs) were investigated as discrete charge storage nodes embedded in the gate dielectric of metal-oxide-semiconductor (MOS) capacitors. The GaN QDs were formed on top of 3.5 nm-thick SiO2/n-Si(001) substrates by radiofrequency plasma-assisted molecular beam deposition. ... [Appl. Phys. Lett. 102, 053117 (2013)] published Wed Feb 06, 2013.
Link to full article
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