Nanoscale , 2014, Accepted Manuscript
DOI: 10.1039/C3NR04077A, Paper
DOI: 10.1039/C3NR04077A, Paper
Tao Wang, Mingsu Si, Dezheng Yang, Zhong Shi, Fangchong Wang, Zhaolong Yang, Shiming Zhou, Desheng Xue
We report a pronounced angular dependence of the magnetoresistance (MR) effect in silicon based p-n junction device at room temperature by manipulating the space charge region of p-n junction under...
The content of this RSS Feed (c) The Royal Society of Chemistry
We report a pronounced angular dependence of the magnetoresistance (MR) effect in silicon based p-n junction device at room temperature by manipulating the space charge region of p-n junction under...
The content of this RSS Feed (c) The Royal Society of Chemistry
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