Angular dependence of the magnetoresistance effect in silicon based p-n junction device

Nanoscale , 2014, Accepted Manuscript

DOI: 10.1039/C3NR04077A, Paper

Tao Wang, Mingsu Si, Dezheng Yang, Zhong Shi, Fangchong Wang, Zhaolong Yang, Shiming Zhou, Desheng Xue

We report a pronounced angular dependence of the magnetoresistance (MR) effect in silicon based p-n junction device at room temperature by manipulating the space charge region of p-n junction under...

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