Abstract
The effects of annealing temperatures 600, 650, 700, and 750 °C on microstructure, chemical composition, leakage current,
ferroelectric, dielectric, and piezoelectric properties of Bi3.15Eu0.85Ti3O12 (BET) thin films prepared by metal–organic decomposition were studied in detail. The largest spontaneous polarization 2P
s (98.7 μC/cm2 under 300 kV/cm), remnant polarization 2P
r (81.7 μC/cm2 under 300 kV/cm), dielectric constant εr (889.4 at 100 kHz), effective piezoelectric coefficient d
33 (46.7 pm/V under 260 kV/cm), and lowest leakage current (1.3 × 10−6 A/cm2 under 125 kV/cm) of BET thin film were obtained with annealing at 700 °C. The mechanisms concerning the dependence of the
enhancement d
33 are discussed according to the phenomenological equation, and the improved piezoelectric performance could make BET thin
film a promising candidate for piezoelectric thin film devices.
ferroelectric, dielectric, and piezoelectric properties of Bi3.15Eu0.85Ti3O12 (BET) thin films prepared by metal–organic decomposition were studied in detail. The largest spontaneous polarization 2P
s (98.7 μC/cm2 under 300 kV/cm), remnant polarization 2P
r (81.7 μC/cm2 under 300 kV/cm), dielectric constant εr (889.4 at 100 kHz), effective piezoelectric coefficient d
33 (46.7 pm/V under 260 kV/cm), and lowest leakage current (1.3 × 10−6 A/cm2 under 125 kV/cm) of BET thin film were obtained with annealing at 700 °C. The mechanisms concerning the dependence of the
enhancement d
33 are discussed according to the phenomenological equation, and the improved piezoelectric performance could make BET thin
film a promising candidate for piezoelectric thin film devices.
- Content Type Journal Article
- DOI 10.1007/s10853-010-4301-2
- Authors
- X. J. Zheng, Xiangtan University Faculty of Materials, Optoelectronics and Physics Xiangtan 411105 Hunan People’s Republic of China
- Q. Y. Wu, Xiangtan University Faculty of Materials, Optoelectronics and Physics Xiangtan 411105 Hunan People’s Republic of China
- J. F. Peng, Xiangtan University Faculty of Materials, Optoelectronics and Physics Xiangtan 411105 Hunan People’s Republic of China
- L. He, Xiangtan University Faculty of Materials, Optoelectronics and Physics Xiangtan 411105 Hunan People’s Republic of China
- X. Feng, Tsinghua University School of Aerospace Beijing 100084 People’s Republic of China
- Y. Q. Chen, Xiangtan University Faculty of Materials, Optoelectronics and Physics Xiangtan 411105 Hunan People’s Republic of China
- D. Z. Zhang, Xiangtan University Faculty of Materials, Optoelectronics and Physics Xiangtan 411105 Hunan People’s Republic of China
- Journal Journal of Materials Science
- Online ISSN 1573-4803
- Print ISSN 0022-2461
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