Correlation between evolution of resistive switching and oxygen vacancy configuration in La 0.5 Ca=0A0.5 MnO 3 based memristive devices

Zhi-Hong Wang, Yang Yang, Lin Gu, H-U Habermeier, Ri-Cheng Yu, Tong-Yun Zhao, Ji-Rong Sun and Bao-Gen Shen Link to full article

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