Monday, July 23, 2012

Defect engineering: reduction effect of hydrogen atom impurities in HfO 2 -based resistive-switching=0Amemory devices

Seonghyun Kim, Daeseok Lee, Jubong Park, Seungjae Jung, Wootae Lee, Jungho Shin, Jiyong Woo, Godeuni Choi and Hyunsang Hwang



Link to full article




ifttt
Put the internet to work for you. via Personal Recipe 718177
Posted by at

No comments:

Post a Comment

Subscribe to: Post Comments (Atom)