Monday, July 02, 2012

Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer

Donghua Liu, Zhiwen Shi, Lianchang Zhang, Congli He, Jing Zhang, Meng Cheng, Rong Yang, Xuezeng Tian, Xuedong Bai, Dongxia Shi and Guangyu Zhang



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