Thursday, August 30, 2012

Gate-Defined Confinement in Bilayer Graphene-Hexagonal Boron Nitride Hybrid Devices

Augustinus (Stijn) M. Goossens, Stefanie C. M. Driessen, Tim A. Baart, Kenji Watanabe, Takashi Taniguchi and Lieven M. K. Vandersypen



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DOI: 10.1021/nl301986q






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