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Cheng-Han Hsu, Qiaoming Wang, and Xin Tao et al.
The electrostatics and electrical transport characteristics in semiconductor nanowire Schottky diodes are studied using three-dimensional finite-element simulations. From the simulations, the dependences of the depletion region width on the bias and the doping level are found to deviate significan ... [Appl. Phys. Lett. 101, 183103 (2012)] published Mon Oct 29, 2012.
Link to full article
Cheng-Han Hsu, Qiaoming Wang, and Xin Tao et al.
The electrostatics and electrical transport characteristics in semiconductor nanowire Schottky diodes are studied using three-dimensional finite-element simulations. From the simulations, the dependences of the depletion region width on the bias and the doping level are found to deviate significan ... [Appl. Phys. Lett. 101, 183103 (2012)] published Mon Oct 29, 2012.
Link to full article
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