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Jie Zhang, Rong Huang, and Lin Shi et al.
Bi-doped GeTe nanowires were fabricated using chemical vapor deposition. Composition and microstructure characterizations indicated that Bi (∼3 at. %) doping preserved GeTe rhombohedral structure with slight X-ray diffraction peak shifts, implying material parameters variation. A doping model was ... [Appl. Phys. Lett. 102, 063104 (2013)] published Mon Feb 11, 2013.
Link to full article
Jie Zhang, Rong Huang, and Lin Shi et al.
Bi-doped GeTe nanowires were fabricated using chemical vapor deposition. Composition and microstructure characterizations indicated that Bi (∼3 at. %) doping preserved GeTe rhombohedral structure with slight X-ray diffraction peak shifts, implying material parameters variation. A doping model was ... [Appl. Phys. Lett. 102, 063104 (2013)] published Mon Feb 11, 2013.
Link to full article
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